Silicon on Sapphire
Silicon on Sapphire
Product Detail



Parameters range for Silicon on Sapphire (SOS) Epi Wafers
Wafer diameter
76 mm, 100 mm, 150 mm
Orientation(1012) ± 1º (R-plane)
Substrate dopant-
Epi-layer thickness (µm)0.3 – 2.0
Epi-layer dopantPhosphorous, Boron
Epi-layer resistivity (Ohm.cm)2.5-30 Ohm.cm
n-typeaccording to spec.
p-typeaccording to spec.


Crystalline quality in the whole region of silicon film on sapphire substrate has been improved by doubly applying solid-phase epitaxial regrowth combined with amorphization of both the silicon surface and the silicon-sapphire interface regions of SOS. Grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements.

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