Sapphire (Al₂O₃)
Sapphire (Al₂O₃)
Product Detail



ItemSpecification
Material
High Purity Monocystalline Al2O3 (≥99.996%)
Orientation C to MC-plane(0001) off to M-plane (1100) 0.2±0.1°;0°± 0.1°(A-axis)
Orientation Tolerance C to A0.00±0.1°
Primary Flat to A-plane(11-20)A-plane ± 0.2°
Diameter
50.8±0.1mm, 100±0.1mm, 150±0.2mm
Thickness
420~440um, 640-660um,1300mm
Flat Length16±1.0mm, 30±1.0mm, 47.5±1.5mm
Edge profile
R
TTV≤5um
Bow
0~-10um
Warp≤15um
Front Side Roughness
<0.3nm
LTV≤1.8um
R PlaneR9
Back Side Roughness
0.8-1.2um
Laser MarkBack side


Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.

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