GaAs (Gallium Arsenide)
GaAs (Gallium Arsenide)
Product Detail





Type/Dopant
Semi-Insulated
P-Type/ZnN-Type/SiN-Type/Si
ApplicationMicro EletronicLEDLaser Diode
Growth MethodVGF
Diameter2", 3", 4", 6"
Orientation(100)±0.5°(100)±0.5°
Thickness350-625um±25um
OF/IFUS EJ or Notch
Carrier Concentration-(0.5-5)*1019(0.4-4)*1018(0.4-0.25)*1018
Resistivity (ohm-cm)>107(1.2-9.9)*10-3(1.2-9.9)*10-3(1.2-9.9)*10-3
Mobility (cm2/V.S.)>400050-120>1000>1500
Etch Pitch Density (/cm2)<5000<5000<5000<500
TTV   [P/P] (µm)<5
TTV   [P/E] (µm)<10
Warp (µm)<10
Surface FinishedP/P, P/E, E/E
Note:Other Specifications maybe available upon request


4” GaAs Wafer Backthinning

Discover why GaAs wafers are the becoming the worldwide semiconductor material of choice.

A variety of different wafer materials and sizes are used across the semiconductor industry. GaAs (Gallium Arsenide) wafers exhibit certain electronic properties that are superior to Silicon (Si). This advantage has allowed GaAs wafers to become popular in high frequency and opto-electronic applications, despite strict industry requirements.



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