GaN (Gallium Nitride)
GaN (Gallium Nitride)
Product Detail




GaN/ Al₂O₃ Substrates (4")   
ItemUn-dopedN-typeHigh-doped N-type
Size 尺寸 (mm)Φ100.0±0.5 (4")
Substrate StructureGaN on Sapphire(0001)
SurfaceFinished
(Standard: SSP Option: DSP)
Thickness (μm)4.5±0.5; 20±2;Customized
Conduction Type
Un-dopedN-typeHigh-doped N-type
Resistivity   (Ω·cm)(300K)≤0.5≤0.05≤0.01
GaN Thickness Uniformity

≤±10% (4")
Dislocation Density (cm-2)

≤5×108
Useable Surface Area>90%
Package
Packaged in a class 100 clean room environment.


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