Float Zone (FZ) Wafers
Float Zone (FZ) Wafers
Product Detail



Diameter
2"
3"
4"
5"
6"
8"
GradePrime
Growth MethodFZ
Orientation<1-0-0>,<1-1-1>
Type/DopantIntrinsic,P Type/Boron,N Type/Phos
Thichness (um)
279
380525
625675725
Thichness ToleranceStandard ±25um± 50um
Resistivity(Ohm-cm)1000-20000 ,Maximum Capabilities>20000, 1-5 ohm-cm
Surface FinishedP/E,P/P,E/E,G/G
TTV (um)Standard < 10um
Bow/Warp (um)Standard < 40um<50um
Particle<10@0.3um<30@0.5um


Silicon wafers are a matter of precision work. Silicon wafers form the basis of the most complex electronic components — from thyristors for high-voltage applications, through low-ohm circuit elements in automotive engineering and telecommunications, to large-scale integrated microprocessors and memory modules for information processing.
                         

Float-zone silicon

In contrast to the Czochralski process the polysilicon is not entirely molten, but, as in the zone cleaning, only a small area (a few millimeters).

Again, a seed crystal, which will be introduced to the end of the polycrystalline silicon rod, sets the crystal structure. The polycrystal is molten and assumes the structure of the seedling. The heated region is slowly guided along the rod, the polycrystalline silicon rod slowly transforms into a single crystal.

Since only a small portion of the polycrystalline silicon is molten, it can hardly be polluted (impurities accumulate at the bottom since their higher solubility). The doping is done by additions of dopants into the inert gas (eg with diborane or phosphine) which flows around the apparatus.

Illustration of the float-zone process

Float-zone process


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