| Czochralski
| Float Zone | Float Zone |
Diameter | 100-150 mm | 50-150 mm* | 100-150 mm*
|
Crystal orientation | <100> <111> | <100> <111> | <100> <111> |
Orientation accuracy | <0.5° | <0.5° | <0.5° |
Type and dopant | Undoped, n-type, p-type | Undoped, n-type,p-type | Undoped, n-type,p-type |
Dopant | As, B, P, and Sb | P, B | P, B |
Bulk resistivity | 0.001-601-30,000 | 1-30,000 | 1-30,000 |
Bulk lifetime | >20 µs | >1,000 µs | >1,000 µs |
Wafer thickness | 200-1,500 µm | 200-1,500 µm | 200-1,500 µm |
Wafer thickness tolerance | ±15 µm | ±15 µm | ±5 µm |
TTV | <5 µm or <9 µm | <5 µm or <9 µm | <2.5 µm |
TIR
| <3 µm | <3 µm | <1 µm |
Wafer surface finish | Single side polished, Double side polished
| Single side polished | Double side polished |
MEMS (Microelectromechanical Systems) is a term introduced to represent a class of miniaturized mechanical or electro-mechanical devices including sensors, actuators and biochips.
Typically use silicon as the substrate due to its IC semiconducting compatibility as well as unique electrical and mechanical properties, such as semiconductivity piezoresistivity, high mechanical strength,ect…